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white electronic designs wmf512k8-xxx5 1 white electronic designs corporation ? (602) 437-1520 ? www.wedc.com november 2005 rev. 6 white electronic designs corp. reserves the right to change products or speci? cations without notice. 512kx8 monolithic flash, smd 5962-96692 features access times of 60, 70, 90, 120, 150ns packaging ? 32 pin, hermetic ceramic, 0.600" dip (package 300) ? 32 lead, hermetic ceramic, 0.400" soj (package 101) ? 32 pin, rectangular ceramic leadless chip carrier (package 601) ? 32 lead flatpack (package 220) 1,000,000 erase/program cycles minimum sector erase architecture ? 8 equal size sectors of 64k bytes each ? any combination of sectors can be concurrently erased. also supports full chip erase organized as 512kx8 commercial, industrial and military temperature ranges 5 volt programming. 5v 10% supply. low power cmos embedded erase and program algorithms ttl compatible inputs and cmos outputs page program operation and internal program control time. note: for programming information refer to flash programming 4m5 application note. this product is subject to change without notice. pin con? guration for wmf512k8-xxx5 pin description a 0 - 18 address inputs i/o 0-7 data input/output cs# chip select oe# output enable we# write enable v cc +5.0v power v ss ground 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 a18 a16 a15 a12 a7 a6 a5 a4 a3 a2 a1 a0 i/o0 i/o1 i/o2 v ss v cc we# a17 a14 a13 a8 a9 a11 oe# a10 cs# i/o7 i/o6 i/o5 i/o4 i/o3 top view 32 dip 32 csoj 32 flatpack 5 6 7 8 9 10 11 12 13 29 28 27 26 25 24 23 22 21 4 3 2 1 32 31 30 14 15 16 17 18 19 20 a7 a6 a5 a4 a3 a2 a1 a0 i/o 0 i/o1 i/o2 v ss i/o3 i/o4 i/o5 i/o6 a14 a13 a8 a9 a11 oe# a10 cs# i/o7 a12 a15 a16 a18 v cc we# a17 pin con? guration for wmf512k8-xclx5 top view 32 clcc
2 white electronic designs corporation ? (602) 437-1520 ? www.wedc.com white electronic designs wmf512k8-xxx5 november 2005 rev. 6 white electronic designs corp. reserves the right to change products or speci? cations without notice. absolute maximum ratings (1) parameter unit operating temperature -55 to +125 c supply voltage (v cc ) (1) -2.0 to +7.0 v signal voltage range(any pin except a9) (2) -2.0 to +7.0 v storage temperature range -65 to +150 c lead temperature (soldering, 10 seconds) +300 c data retention mil temp 20 years endurance - erase/program cycles (mil temp) 100,000 min cycles a9 voltage for sector protect (v id ) (3) -2.0 to +14.0 v notes: 1. stresses above the absolute maximum rating may cause permanent damage to the device. extended operation at the maximum levels may degrade performance and affect reliability. 2. minimum dc voltage on input or i/o pins is -0.5v. during voltage transitions, inputs may overshoot v ss to -2.0 v for periods of up to 20ns. maximum dc voltage on output and i/o pins is v cc + 0.5v. during voltage transitions, outputs may overshoot to vcc + 2.0 v for periods of up to 20ns. 3. minimum dc input voltage on a9 pin is -0.5v. during voltage transitions, a9 may overshoot vss to -2v for periods of up to 20ns. maximum dc input voltage on a9 is +13.5v which may overshoot to 14.0 v for periods up to 20ns. dc characteristics cmos compatible v cc = 5.0v, v ss = 0v, -55c t a +125c parameter symbol conditions min max unit input leakage current i li v cc = 5.5, v in = gnd to v cc 10 a output leakage current i lox32 v cc = 5.5, v in = gnd to v cc 10 a v cc active current for read (1) i cc1 cs# = v il , oe# = v ih , f = 5mhz 50 ma v cc active current for program or erase (2) i cc2 cs# = v il , oe# = v ih 60 ma v cc standby current i cc4 v cc = 5.5, cs# = v ih , f = 5mhz 1.6 ma output low voltage v ol i ol = 8.0 ma, v cc = 4.5 0.45 v output high voltage v oh1 i oh = -2.5 ma, v cc = 4.5 0.85 x v cc v low v cc lock-out voltage v lko 3.2 4.2 v notes: 1. the i cc current listed includes both the dc operating current and the frequency dependent component (at 5 mhz). the frequency component typically is less than 2 ma/mhz, with oe# at v ih . 2. i cc active while embedded algorithm (program or erase) is in progress. 3. dc test conditions: v il = 0.3v, v ih = v cc - 0.3v recommended operating conditions parameter symbol min max unit supply voltage v cc 4.5 5.5 v input high voltage v ih 2.0 v cc + 0.5 v input low voltage v il -0.5 +0.8 v operating temp. (mil.) t a -55 +125 c operating temp. (ind.) t a -40 +85 c a9 voltage for sector protect v id 11.5 12.5 v capacitance t a = +25c parameter symbol conditions max unit address input capacitance cad vi/o = 0 v, f = 1.0 mhz 15 pf output enable capacitance coe vin = 0 v, f = 1.0 mhz 15 pf write enable capacitance cwe vin = 0 v, f = 1.0 mhz 15 pf chip select capacitance ccs vin = 0 v, f = 1.0 mhz 15 pf data i/o capacitance ci/o vi/o = 0 v, f = 1.0 mhz 15 pf this parameter is guaranteed by design but not tested.
3 white electronic designs corporation ? (602) 437-1520 ? www.wedc.com white electronic designs wmf512k8-xxx5 november 2005 rev. 6 white electronic designs corp. reserves the right to change products or speci? cations without notice. ac characteristics C write/erase/program operations,cs# controlled v cc = 5.0v, v ss = 0v, -55c t a +125c parameter symbol -60 -70 -90 -120 -150 unit min max min max min max min max min max write cycle time t avav t wc 60 70 90 120 150 ns write enable setup time t wlel t ws 00000ns chip select pulse width t eleh t cp 40 45 45 50 50 ns address setup time t avel t as 00000ns data setup time t dveh t ds 40 45 45 50 50 ns data hold time t ehdx t dh 00000ns address hold time t elax t ah 40 45 45 50 50 ns chip select pulse width high t ehel t cph 20 20 20 20 20 ns duration of byte programming operation (1) t whwh1 300 300 300 300 300 s sector erase time (2) t whwh2 15 15 15 15 15 sec read recovery time t ghel 00000ns chip programming time 11 11 11 11 11 sec chip erase time (3) 64 64 64 64 64 sec notes: 1. typical value for t whwh1 is 7s. 2. typical value for t whwh2 is 1sec. 3. typical value for chip erase time is 8sec. ac test circuit ac test conditions parameter typ unit input pulse levels vil = 0, vih = 3.0 v input rise and fall 5 ns input and output reference level 1.5 v output timing reference level 1.5 v notes: v z is programmable from -2v to +7v. i ol & i oh programmable from 0 to 16ma. tester impedance z 0 = 75 ? . v z is typically the midpoint of v oh and v ol . i ol & i oh are adjusted to simulate a typical resistive load circuit. ate tester includes jig capacitance. i current source d.u.t. c = 50 pf eff i ol v 1.5v (bipolar supply) z current source oh
4 white electronic designs corporation ? (602) 437-1520 ? www.wedc.com white electronic designs wmf512k8-xxx5 november 2005 rev. 6 white electronic designs corp. reserves the right to change products or speci? cations without notice. ac characteristics C read only operations v cc = 5.0v, -55c t a +125c parameter symbol -60 -70 -90 -120 -150 unit min max min max min max min max min max read cycle time t avav t rc 60 70 90 120 150 ns address access time t avqv t acc 60 70 90 120 150 ns chip select access time t elqv t ce 60 70 90 120 150 ns output enable to output valid t glqv t oe 35 35 35 50 55 ns chip select to output high z (1) t ehqz t df 20 20 20 30 35 ns output enable high to output high z (1) t ghqz t df 20 20 20 30 35 ns output hold from address, cs# or oe# change, whichever is first t axqx t oh 00000ns notes: 1. guaranteed by design, but not tested ac characteristics C write/erase/program operations, we# controlled v cc = 5.0v, -55c t a +125c parameter symbol -60 -70 -90 -120 -150 unit min max min max min max min max min max write cycle time t avav t wc 60 70 90 120 150 ns chip select setup time t elwl t cs 00000ns write enable pulse width t wlwh t wp 40 45 45 50 50 ns address setup time t avwh t as 00000ns data setup time t dvwh t ds 40 45 45 50 50 ns data hold time t whdx t dh 00000ns address hold time t whax t ah 40 45 45 50 50 ns write enable pulse width high t whwl t wph 20 20 20 20 20 ns duration of byte programming operation (1) t whwh1 300 300 300 300 300 s sector erase time (2) t whwh2 15 15 15 15 15 sec read recovery time before write t ghwl 00000ms vcc set-up time t vcs 50 50 50 50 50 s chip programming time 11 11 11 11 11 sec output enable setup time t oes 00000ns output enable hold time (4) t oeh 10 10 10 10 10 ns chip erase time (3) 64 64 64 64 64 sec notes: 1. typical value for t whwh1 is 7s. 2. typical value for t whwh2 is 1sec. 3. typical value for chip erase time is 8sec. 4. for toggle and data# polling.
5 white electronic designs corporation ? (602) 437-1520 ? www.wedc.com white electronic designs wmf512k8-xxx5 november 2005 rev. 6 white electronic designs corp. reserves the right to change products or speci? cations without notice. ac waveforms for read operations addresses cs# oe# we# outputs high z addresses stable t oe t rc output valid t ce t acc t oh high z t df notes: 1. pa is the address of the memory location to be programmed. 2. pd is the data to be programmed at byte address. 3. i/o 7 # is the output of the complement of the data written to the device. 4. i/o out is the output of the data written to the device. 5. figure indicates last two bus cycles of four bus cycle sequence. write/erase/program operation, we# controlled addresses cs# oe# we# data 5.0 v 5555h pa pa t wc t cs pd i/o 7 # i/o out t ah t wph t dh t ds data# polling t as t rc t wp a0h t oe t df t oh t ce t ghwl t whwh1
6 white electronic designs corporation ? (602) 437-1520 ? www.wedc.com white electronic designs wmf512k8-xxx5 november 2005 rev. 6 white electronic designs corp. reserves the right to change products or speci? cations without notice. cs# oe# we# t oe t oe t ce t ch t oh i/o 7 # i/o 7 = valid data high z i/o 0-6 = invalid i/o 0-7 valid data t df i/o 7 i/o 0-6 t oeh t whwh 1 or 2 data ac waveforms for data# polling during embedded algorithm operations ac waveforms chip/sector erase operations addresses cs# oe# we# data v cc 5555h 2aaah 2aaah sa 5555h 5555h t wp t cs t vcs 10h/30h 55h 80h 55h aah aah t ah t as t ghwl t wph t dh t ds notes: 1. sa is the sector address for sector erase.
7 white electronic designs corporation ? (602) 437-1520 ? www.wedc.com white electronic designs wmf512k8-xxx5 november 2005 rev. 6 white electronic designs corp. reserves the right to change products or speci? cations without notice. notes: 1. pa represents the address of the memory location to be programmed. 2. pd represents the data to be programmed at byte address. 3. i/o 7 # is the output of the complement of the data written to the device. 4. i/o out is the output of the data written to the device. 5. figure indicates the last two bus cycles of a four bus cycle sequence. addresses we# oe# cs# data 5.0 v 5555h pa pa t wc t ws pd i/o 7 # i/o out t ah t cph t cp t dh t ds data# polling t as t ghel a0h t whwh1 alternate cs# controlled programming operation timings
8 white electronic designs corporation ? (602) 437-1520 ? www.wedc.com white electronic designs wmf512k8-xxx5 november 2005 rev. 6 white electronic designs corp. reserves the right to change products or speci? cations without notice. all linear dimensions are millimeters and parenthetically in inches package 101: 32 lead, ceramic soj 1.27 (0.050) typ 21.1 (0.830) 0.25 (0.010) 19.1 (0.750) typ 11.3 (0.442) 0.30 (0.012) 3.96 (0.156) max 0.2 (0.008) 0.05 (0.002) 9.55 (0.376) 0.25 (0.010) 1.27 (0.050) 0.25 (0.010) 0.89 (0.035) radius typ pin 1 identifier package 220: 32 lead, ceramic flatpack all linear dimensions are millimeters and parenthetically in inches 10.41 (0.410) 0.13 (0.005) 2.60 (0.102) max 0.127 (0.005) + 0.05 (0.002) C 0.025 (0.001) pin 1 identifier 1.27 (0.050) typ 19.05 (0.750) typ 10.16 (0.400) 0.51 (0.020) 0.43 (0.017) 0.05 (0.002) 20.83 (0.820) 0.25 (0.010)
9 white electronic designs corporation ? (602) 437-1520 ? www.wedc.com white electronic designs wmf512k8-xxx5 november 2005 rev. 6 white electronic designs corp. reserves the right to change products or speci? cations without notice. package 300: 32 pin, ceramic dip, single cavity side brazed 2.5 (0.100) typ 1.27 (0.050) 0.1 (0.005) 0.46 (0.018) 0.05 (0.002) 0.84 (0.033) 0.4 (0.014) 3.2 (0.125) min 15.04 (0.592) 0.3 (0.012) 0.25 (0.010) 0.05 (0.002) 15.25 (0.600) 0.25 (0.010) 42.4 (1.670) 0.4 (0.016) 4.34 (0.171) 0.79 (0.031) pin 1 identifier all linear dimensions are millimeters and parenthetically in inches
10 white electronic designs corporation ? (602) 437-1520 ? www.wedc.com white electronic designs wmf512k8-xxx5 november 2005 rev. 6 white electronic designs corp. reserves the right to change products or speci? cations without notice. all linear dimensions are millimeters and parenthetically in inches package 601: 32 pin, rectangular ceramic leadless chip carrier 7.62 (0.300) typ 5.08 (0.200) typ 3.81 (0.150) typ 10.16 (0.400) typ 0.38 (0.015) x 45 pin 1 identifier 0.56 (0.022) 0.71 (0.028) 11.25 (0.443) 14.15 (0.557) 13.79 (0.543) 14.15 (0.557) 1.63 (0.064) 2.54 (0.100) pin 1 1.02 (0.040) x 45 3 places
11 white electronic designs corporation ? (602) 437-1520 ? www.wedc.com white electronic designs wmf512k8-xxx5 november 2005 rev. 6 white electronic designs corp. reserves the right to change products or speci? cations without notice. ordering information white electronic designs corp. monolithic flash organization, 512k x 8 access time (ns) package type: c = 32 pin ceramic dip (package 300) cl = 32 pin rectangular ceramic leadless chip carrier (package 601) de = 32 lead ceramic soj (package 101) fe = 32 lead flatpack (package 220) device grade: m = military screened -55c to +125c i = industrial -40c to +85c c = commercial 0c to +70c v pp programming voltage 5 = 5v lead finish: blank = gold plated leads a = solder dip leads w m f 512k 8 - xxx x x 5 x
12 white electronic designs corporation ? (602) 437-1520 ? www.wedc.com white electronic designs wmf512k8-xxx5 november 2005 rev. 6 white electronic designs corp. reserves the right to change products or speci? cations without notice. device type sector size speed package smd no. 512k x 8 flash monolithic 64kbyte 150ns 32 pin dip (c) 5962-96692 01hxx 512k x 8 flash monolithic 64kbyte 120ns 32 pin dip (c) 5962-96692 02hxx 512k x 8 flash monolithic 64kbyte 90ns 32 pin dip (c) 5962-96692 03hxx 512k x 8 flash monolithic 64kbyte 70ns 32 pin dip (c) 5962-96692 04hxx 512k x 8 flash monolithic 64kbyte 150ns 32 lead soj (de) 5962-96692 01hyx 512k x 8 flash monolithic 64kbyte 120ns 32 lead soj (de) 5962-96692 02hyx 512k x 8 flash monolithic 64kbyte 90ns 32 lead soj (de) 5962-96692 03hyx 512k x 8 flash monolithic 64kbyte 70ns 32 lead soj (de) 5962-96692 04hyx 512k x 8 flash monolithic 64kbyte 150ns 32 lead flatpack (fe) 5962-96692 01hux 512k x 8 flash monolithic 64kbyte 120ns 32 lead flatpack (fe) 5962-96692 02hux 512k x 8 flash monolithic 64kbyte 90ns 32 lead flatpack (fe) 5962-96692 03hux 512k x 8 flash monolithic 64kbyte 70ns 32 lead flatpack (fe) 5962-96692 04hux 512k x 8 flash monolithic 64kbyte 150ns 32 lead flatpack (ff) 5962-96692 01htx 512k x 8 flash monolithic 64kbyte 120ns 32 lead flatpack (ff) 5962-96692 02htx 512k x 8 flash monolithic 64kbyte 90ns 32 lead flatpack (ff) 5962-96692 03htx 512k x 8 flash monolithic 64kbyte 70ns 32 lead flatpack (ff) 5962-96692 04htx
13 white electronic designs corporation ? (602) 437-1520 ? www.wedc.com white electronic designs wmf512k8-xxx5 november 2005 rev. 6 white electronic designs corp. reserves the right to change products or speci? cations without notice. document title 512k x 8 flash monolithic revision history rev # history release date status rev 1 initial release changes (pg. 1) 1.1 change status to final changes (pg. 1) 1.1 correct typo of ceramic changes (pg. 10) 1.1 remove pedestal from flatpack package drawing changes (pg. 1) 1.1 change name from fp to flatpack september 1996 may 1997 february 1998 april 1998 february 1999 preliminary final final final final rev 2 changes (pg. 1, 2, 3, 4, 13) 2.1 change number of max program/erases to 1,000,000 2.2 change temperature of max program/erases to 25c 2.3 absolute maximum ratings table: 2.3.1 change data retention to 20years 2.3.2 change endurance to 100,000 cycles minimum 2.4 write/erase/program operations tables: 2.4.1 change t whwh 1 to 300s 2.4.2 add note (1) typical t whwh 1 = 7s 2.4.3 change t whwh2 to 15sec 2.4.4 add note (2) typical t whwh2 = 1 sec 2.4.5 change chip programming time to 11 sec 2.4.6 change chip erase time too 64 sec 2.4.7 add note (3) chip erase time = 8 sec 2.5 ordering information 2.5.1 change company name to white edc 2.6 change title style to new wedc look may 1999 final rev 3 changes (pg. 1, 2, 10, 12, 13) 3.1 change package 206 to package 220 3.2 remove temperature range notice for endurance 3.3 change width spec to 0.457" minimum for package 601 may 1999 final rev 4 changes (pg. 1, 3, 4) 4.1 add 60ns speed grade option january 2003 final rev 5 changes (pg. 1, 11, 13) 5.1 add 't' case outline for 'ff' package april 2005 final rev 6 changes (pg. 1, 13) 6.1 change revision history rev 2.4.1 to 300 s 6.2 change revision history rev 2.4.2 to 7s november 2005 final

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